IQDH88N06LM5SCATMA1 vs IQDH88N06LM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQDH88N06LM5SCATMA1 von Infineon und IQDH88N06LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon
IQDH88N06LM5SCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQDH88N06LM5SCATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,55 | $2,31 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IQDH88N06LM5SCATMA1 | — |
| Series | OptiMOS 5 | — |
| Technology | N-Channel MOSFET (OptiMOS 5) | OptiMOS 5 (trench) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Ta) | 42 A | — |
| Continuous Drain Current (ID, Tc) | 447 A | — |
| On-State Resistance (RDS(on)) | 0.7 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V | — |
| Total Gate Charge (Qg) | 76 nC | — |
| Input Capacitance (Ciss) | 11 nF | — |
| Output Capacitance (Coss) | 2 nF | — |
| Reverse Transfer Capacitance (Crss) | 95 pF | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| Betriebstemperaturbereich | -55 C to +175 C | -55°C to +175°C (TJ) |
| Gehäuse | PG-WHSON-8-U02 (source-down, dual-side cooling) | PG-WHTFN-9-U02 (PQFN 5x6) |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (Ta=25°C) | — | 42 A |
| Kontinuierlicher Drain-Strom (TC=25°C) | — | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | — | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | — | 3 W |
| Verlustleistung (TC=25°C) | — | 333 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge Qg typical | — | [DATA_NEEDED: Qg typical nC] |
| Pin-Anzahl | — | 9 (with exposed pad) |
| Cooling | — | Dual-side cooling capable |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Polarity | — | N-Channel |
| Configuration | — | Single |