IQDH88N06LM5SCATMA1 vs IQDH88N06LM5CGSCATMA1 Comparación
Comparación detallada lado a lado de IQDH88N06LM5SCATMA1 por Infineon y IQDH88N06LM5CGSCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon
IQDH88N06LM5SCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQDH88N06LM5SCATMA1 | IQDH88N06LM5CGSCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,55 | $2,31 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IQDH88N06LM5SCATMA1 | — |
| Series | OptiMOS 5 | — |
| Technology | N-Channel MOSFET (OptiMOS 5) | OptiMOS 5 (trench) |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, Ta) | 42 A | — |
| Continuous Drain Current (ID, Tc) | 447 A | — |
| On-State Resistance (RDS(on)) | 0.7 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.7 V | — |
| Total Gate Charge (Qg) | 76 nC | — |
| Input Capacitance (Ciss) | 11 nF | — |
| Output Capacitance (Coss) | 2 nF | — |
| Reverse Transfer Capacitance (Crss) | 95 pF | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 333 W | — |
| Rango de temperatura de funcionamiento | -55 C to +175 C | -55°C to +175°C (TJ) |
| Encapsulado | PG-WHSON-8-U02 (source-down, dual-side cooling) | PG-WHTFN-9-U02 (PQFN 5x6) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | Compliant | Compliant |
| Tipo de transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 60 V |
| Continuous Drain Current (Ta=25°C) | — | 42 A |
| Corriente de drenador continua (TC=25°C) | — | 447 A |
| On-Resistance RDS(on) typical @ VGS=10V | — | 0.86 mΩ |
| Power Dissipation (Ta=25°C) | — | 3 W |
| Disipación de potencia (TC=25°C) | — | 333 W |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge Qg typical | — | [DATA_NEEDED: Qg typical nC] |
| Recuento de pines | — | 9 (with exposed pad) |
| Cooling | — | Dual-side cooling capable |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |
| Polarity | — | N-Channel |
| Configuration | — | Single |