IQE004NE1LM7CGATMA1 vs ISC011N06LM5ATMA1 Vergleich
Detaillierter Direktvergleich von IQE004NE1LM7CGATMA1 von Infineon und ISC011N06LM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IQE004NE1LM7CGATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,06 | $0,74 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Technology | N-Channel Trench Power MOSFET | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 15 V | 60 V |
| Continuous Drain Current (ID, TA=25C) | 58 A | — |
| Continuous Drain Current (ID, TC=25C) | 379 A | — |
| Power Dissipation (TA=25C) | 2.1 W | — |
| Power Dissipation (TC=25C) | 89 W | — |
| On-Resistance RDS(on) max | 0.45 mOhm at VGS=10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Gehäuse | PG-TTFN-9-3 (surface mount) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -55C to +150C (junction) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Packaging | Tape & Reel (CGATMA1 suffix) | — |
| Polarization | N-Channel | — |
| Part Number | — | ISC011N06LM5ATMA1 |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 37 A |
| Continuous Drain Current (ID) at Tc | — | 288 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 188 W |
| RDS(on) max at VGS=10V | — | 1.15 mOhm |
| Pin-Anzahl | — | 8 |
| Betriebstemperaturbereich | — | -55C to +175C |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |