IQE004NE1LM7CGATMA1 vs ISC011N06LM5ATMA1 对比

详细并排对比 IQE004NE1LM7CGATMA1 出自 Infineon 和 ISC011N06LM5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 ✓ 量产中
Infineon
ISC011N06LM5ATMA1 ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon

ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon

ISC011N06LM5ATMA1 ✓ 量产中

规格对比

参数 IQE004NE1LM7CGATMA1 ISC011N06LM5ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.06 $0.74
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 7 —
Technology N-Channel Trench Power MOSFET OptiMOS 5
Drain-Source Voltage (VDS) 15 V 60 V
Continuous Drain Current (ID, TA=25C) 58 A —
Continuous Drain Current (ID, TC=25C) 379 A —
Power Dissipation (TA=25C) 2.1 W —
Power Dissipation (TC=25C) 89 W —
On-Resistance RDS(on) max 0.45 mOhm at VGS=10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
封装 PG-TTFN-9-3 (surface mount) PG-TDSON-8-17 (SuperSO8 5x6 mm)
安装类型 Surface Mount Surface Mount
工作温度 -55C to +150C (junction) —
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Packaging Tape & Reel (CGATMA1 suffix) —
Polarization N-Channel —
Part Number — ISC011N06LM5ATMA1
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Ta — 37 A
Continuous Drain Current (ID) at Tc — 288 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 188 W
RDS(on) max at VGS=10V — 1.15 mOhm
引脚数量 — 8
工作温度范围 — -55C to +175C
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]

数据手册与资源

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