IQE008N03LM5CGSCATMA1 vs IQE008N03LM5SCATMA1 Vergleich
Detaillierter Direktvergleich von IQE008N03LM5CGSCATMA1 von Infineon und IQE008N03LM5SCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IQE008N03LM5CGSCATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,10 | $1,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 |
| Configuration | Dual N-Channel MOSFET Array | Single N-Channel |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | — |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | 2 V (typical) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg total] |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55 °C to +150 °C |
| Gehäuse | PG-WHTFN-9 (WHTFN) | PG-WHSON-8 (Source-Down) |
| Montageart | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | Trench MOSFET (N-Channel) |
| Polarity | N-Channel | — |
| Anzahl der Pins | 9 (WHTFN with exposed thermal pads) | — |
| MSL-Level | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | [DATA_NEEDED: MSL rating] |
| RoHS-Status | Compliant | Compliant |
| Halogenfrei | Yes (Infineon standard for OptiMOS 5) | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) | — | 252 A |
| On-Resistance (RDS(on)) max | — | 0.85 mΩ at VGS = 10 V |
| Gate Drive Voltage | — | 10 V (recommended) |
| Cooling Architecture | — | Source-Down, dual-side cooling |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |