IQE008N03LM5CGSCATMA1 vs IQE008N03LM5SCATMA1 Сравнение
Подробное сравнение бок о бок IQE008N03LM5CGSCATMA1 от Infineon и IQE008N03LM5SCATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ Активен
Сравнение характеристик
| Параметр | IQE008N03LM5CGSCATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,10 | $1,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 5 |
| Configuration | Dual N-Channel MOSFET Array | Single N-Channel |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) Max | 252 A (per channel, case-temperature limited) | — |
| On-Resistance (RDS(on)) Max | 0.85 mOhm at VGS = 10 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | 2 V (typical) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | [DATA_NEEDED: Qg total] |
| Диапазон рабочих температур | -55C to +150C (junction) | -55 °C to +150 °C |
| Корпус | PG-WHTFN-9 (WHTFN) | PG-WHSON-8 (Source-Down) |
| Тип монтажа | Surface Mount (top + bottom cooling) | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5) | Trench MOSFET (N-Channel) |
| Polarity | N-Channel | — |
| Количество выводов | 9 (WHTFN with exposed thermal pads) | — |
| Уровень MSL | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) | [DATA_NEEDED: MSL rating] |
| Статус RoHS | Compliant | Compliant |
| Без галогенов | Yes (Infineon standard for OptiMOS 5) | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) | — | 252 A |
| On-Resistance (RDS(on)) max | — | 0.85 mΩ at VGS = 10 V |
| Gate Drive Voltage | — | 10 V (recommended) |
| Cooling Architecture | — | Source-Down, dual-side cooling |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |