IQE012N03LM5CGATMA1 vs IQE008N03LM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQE012N03LM5CGATMA1 von Infineon und IQE008N03LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE012N03LM5CGATMA1 | IQE008N03LM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,38 | $2,10 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID, Ta) | 34 A | — |
| Pulsed Drain Current (IDM, Tc) | 224 A | — |
| On-Resistance RDS(on), typ | 1.20 mOhm | — |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| Technology / Process | OptiMOS 5 trench | — |
| Gehäuse | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) | PG-WHTFN-9 (WHTFN) |
| Montageart | Surface Mount | Surface Mount (top + bottom cooling) |
| Betriebstemperatur | -55 C to +150 C (TJ) | — |
| Gate Drive (recommended) | 10 V (logic-level compatible) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) Max | — | 252 A (per channel, case-temperature limited) |
| On-Resistance (RDS(on)) Max | — | 0.85 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS maximum rating] |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typ) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Betriebstemperaturbereich | — | -55C to +150C (junction) |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| Polarity | — | N-Channel |
| Anzahl der Pins | — | 9 (WHTFN with exposed thermal pads) |
| Halogenfrei | — | Yes (Infineon standard for OptiMOS 5) |