IQE012N03LM5CGATMA1 vs IQE008N03LM5CGSCATMA1 Comparación
Comparación detallada lado a lado de IQE012N03LM5CGATMA1 por Infineon y IQE008N03LM5CGSCATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IQE012N03LM5CGATMA1 | IQE008N03LM5CGSCATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,38 | $2,10 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID, Ta) | 34 A | — |
| Pulsed Drain Current (IDM, Tc) | 224 A | — |
| On-Resistance RDS(on), typ | 1.20 mOhm | — |
| Gate-Source Threshold VGS(th) | 1.0 V to 2.4 V (typ, OptiMOS 5 logic-level) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| Technology / Process | OptiMOS 5 trench | — |
| Encapsulado | PG-TTFN-9-3 (PQFN 3.3x3.3 Source-Down, center-gate) | PG-WHTFN-9 (WHTFN) |
| Tipo de montaje | Surface Mount | Surface Mount (top + bottom cooling) |
| Temperatura de funcionamiento | -55 C to +150 C (TJ) | — |
| Gate Drive (recommended) | 10 V (logic-level compatible) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) Max | — | 252 A (per channel, case-temperature limited) |
| On-Resistance (RDS(on)) Max | — | 0.85 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS maximum rating] |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typ) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Rango de temperatura de funcionamiento | — | -55C to +150C (junction) |
| Technology | — | Trench MOSFET (OptiMOS 5) |
| Polarity | — | N-Channel |
| Número de pines | — | 9 (WHTFN with exposed thermal pads) |
| Sin halógenos | — | Yes (Infineon standard for OptiMOS 5) |