IQE012N03LM5CGSCATMA1 vs IQE020N04LM6CGATMA1 Vergleich
Detaillierter Direktvergleich von IQE012N03LM5CGSCATMA1 von Infineon und IQE020N04LM6CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE012N03LM5CGSCATMA1 - 30V 1.15mΩ OptiMOS 5 MOSFET | Infineon
IQE012N03LM5CGSCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE012N03LM5CGSCATMA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,55 | $1,75 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench MOSFET) | OptiMOS 6, TrenchFET-class |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) @ Ta | 34 A | — |
| Continuous Drain Current (ID) @ Tc | 224 A | — |
| Maximum RDS(on) @ VGS=10V | 1.15 mΩ | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ, per Merlin listing) | — |
| Gehäuse | PG-WHTFN-9-1 (PQFN 3.3 × 3.3 mm Source-Down dual-side cooled) | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| Montageart | Surface Mount | Surface Mount |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| MSL-Level | 1 (per JEDEC J-STD-020, floor life unlimited) | MSL1 (per JEDEC J-STD-020) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 6 |
| Transistortyp | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC=25°C | — | 166 A |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: Qg value] |
| Betriebstemperaturbereich | — | -55°C to +150°C |
| Configuration | — | Single N-Channel, source-down |