IQE013N04LM6ATMA1 vs IQE220N15NM5ATMA1 Vergleich
Detaillierter Direktvergleich von IQE013N04LM6ATMA1 von Infineon und IQE220N15NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE013N04LM6ATMA1 | IQE220N15NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $0,84 |
| Technology | OptiMOS N-channel trench MOSFET | Trench MOSFET (OptiMOS 5) |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (Ta) | 31 A | — |
| Continuous Drain Current (Tc) | 205 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 107 W | — |
| On-Resistance RDS(on) max | [DATA_NEEDED: RDS(on) max value at VGS=10V] | — |
| On-Resistance RDS(on) typ | 1.35 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ) | 4.6 V (typ at 46 µA) |
| Gehäuse | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down | PG-TSON-8-5 (Source-Down) |
| Betriebstemperaturbereich | -55 °C to +175 °C | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Source-Down Topology | Yes (flip-chip die attach, drain on top thermal pad) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at Ta | — | 7 A |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| RDS(on) Max at VGS=10V | — | 22 mΩ |
| Total Gate Charge (Qg) | — | 14.4 nC at 10 V |
| Input Capacitance (Ciss) | — | 14 pF |
| Output Capacitance (Coss) | — | 340 pF |
| Ausgangskonfiguration | — | Single N-Channel |
| Betriebstemperatur | — | -55C to +150C (junction) |
| MSL-Level | — | 1 |