IQE018N06NM6SCATMA1 vs ISZ072N06NM6ATMA1 Vergleich
Detaillierter Direktvergleich von IQE018N06NM6SCATMA1 von Infineon und ISZ072N06NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IQE018N06NM6SCATMA1 | ISZ072N06NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,98 | $0,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 6 60 V | — |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC | 178 A | — |
| On-Resistance RDS(on) Max | 1.8 mΩ at VGS=10 V | — |
| Gate Threshold Voltage VGS(th) Typ | 3.3 V | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 125 W | — |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse | PG-WHSON-8-1 (5x6 mm) | PG-TSDSON-8-34 (TSDSON-8 FL) |
| Betriebstemperaturbereich | -55 °C to +175 °C (TJ) | -55C to +175C ( Tj max 175C ) |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | OptiMOS 6 60V |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 57 A |
| Continuous Drain Current (ID, Ta) | — | 12.7 A |
| RDS(on) max @ VGS=10V | — | 7.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 3.3 V (typ) |
| Verlustleistung (TC=25°C) | — | 50 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Technology | — | OptiMOS 6 trench MOSFET |
| MSL-Level | — | 1 |