IQE020N04LM6CGATMA1 vs ISK057N04LM6ATSA1 Vergleich
Detaillierter Direktvergleich von IQE020N04LM6CGATMA1 von Infineon und ISK057N04LM6ATSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IQE020N04LM6CGATMA1 | ISK057N04LM6ATSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,75 | $0,30 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC=25°C | 166 A | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | — |
| Gehäuse | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | PG-VSON-6-1 (PQFN 2x2 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55°C to +150°C | -55C to +150C |
| Technology | OptiMOS 6, TrenchFET-class | OptiMOS 6 Trench |
| Configuration | Single N-Channel, source-down | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | — |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Continuous Drain Current (ID) at Ta=25C | — | 15 A |
| Continuous Drain Current (ID) at Tc=25C | — | 64 A |
| Power Dissipation (PD) at Ta | — | 2.1 W |
| Power Dissipation (PD) at Tc | — | 39.1 W |
| On-Resistance RDS(on) at VGS=10V | — | [DATA_NEEDED: typical RDS(on) at 10V] |
| On-Resistance RDS(on) at VGS=4.5V | — | 8.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V (typ) |
| Total Gate Charge (Qg) at VGS=10V | — | 12 nC |
| Input Capacitance (Ciss) | — | 870 pF |
| Output Capacitance (Coss) | — | 290 pF |
| Reverse Transfer Capacitance (Crss) | — | 21 pF |