IQE020N04LM6CGATMA1 vs ISK057N04LM6ATSA1 Comparison
Detailed side-by-side comparison of IQE020N04LM6CGATMA1 by Infineon and ISK057N04LM6ATSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE020N04LM6CGATMA1 - 40V 2.0mΞ© OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE020N04LM6CGATMA1 | ISK057N04LM6ATSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.75 | $0.30 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 6 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25Β°C | 25 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 166 A | β |
| Power Dissipation (PD) at TA=25Β°C | 2.5 W | β |
| Power Dissipation (PD) at TC=25Β°C | 107 W | β |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | β |
| Package | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | PG-VSON-6-1 (PQFN 2x2 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C | -55C to +150C |
| Technology | OptiMOS 6, TrenchFET-class | OptiMOS 6 Trench |
| Configuration | Single N-Channel, source-down | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) | β |
| Polarity | β | N-Channel |
| Gate-Source Voltage (VGS) Max | β | Β±20 V |
| Continuous Drain Current (ID) at Ta=25C | β | 15 A |
| Continuous Drain Current (ID) at Tc=25C | β | 64 A |
| Power Dissipation (PD) at Ta | β | 2.1 W |
| Power Dissipation (PD) at Tc | β | 39.1 W |
| On-Resistance RDS(on) at VGS=10V | β | [DATA_NEEDED: typical RDS(on) at 10V] |
| On-Resistance RDS(on) at VGS=4.5V | β | 8.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | 2.3 V (typ) |
| Total Gate Charge (Qg) at VGS=10V | β | 12 nC |
| Input Capacitance (Ciss) | β | 870 pF |
| Output Capacitance (Coss) | β | 290 pF |
| Reverse Transfer Capacitance (Crss) | β | 21 pF |