IQE036N08NM6ATMA1 vs IQE036N08NM6CGATMA1 Vergleich
Detaillierter Direktvergleich von IQE036N08NM6ATMA1 von Infineon und IQE036N08NM6CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IQE036N08NM6ATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,92 | $0,82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 6 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta | 16.7 A | — |
| Continuous Drain Current (ID) at Tc | 118 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| On-Resistance RDS(on) typical | 3.6 mΩ | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation at Ta | 2.5 W | 2.5 W |
| Power Dissipation at Tc | 125 W | 125 W |
| Gehäuse | PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55°C to +150°C (junction, per datasheet) | -55 C to +175 C (junction, Tj) |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse, per datasheet) | — |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 80 V |
| Gate-Source Voltage (Vgs) | — | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | — | 118 A |
| Continuous Drain Current (Id) at Ta | — | 16.7 A |
| Rds(on) max at Vgs=10V | — | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 3.5 V (max) |
| Technology | — | Trench MOSFET, OptiMOS 6 |
| Configuration | — | Single N-channel, Source-Down |