IQE036N08NM6ATMA1 vs IQE036N08NM6CGATMA1 Comparison
Detailed side-by-side comparison of IQE036N08NM6ATMA1 by Infineon and IQE036N08NM6CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE036N08NM6ATMA1
IQE036N08NM6ATMA1 - 80V OptiMOS 6 N-MOSFET, 3.6mΞ© | Infineon
IQE036N08NM6ATMA1 β ActiveInfineon
IQE036N08NM6CGATMA1
IQE036N08NM6CGATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGATMA1 β ActiveSpecification Comparison
| Parameter | IQE036N08NM6ATMA1 | IQE036N08NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 6 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Ta | 16.7 A | β |
| Continuous Drain Current (ID) at Tc | 118 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| On-Resistance RDS(on) typical | 3.6 mΞ© | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation at Ta | 2.5 W | 2.5 W |
| Power Dissipation at Tc | 125 W | 125 W |
| Package | PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C (junction, per datasheet) | -55 C to +175 C (junction, Tj) |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020) |
| Avalanche Energy Rated | Yes (single-pulse, per datasheet) | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | β | 80 V |
| Gate-Source Voltage (Vgs) | β | [DATA_NEEDED: Vgs max] |
| Continuous Drain Current (Id) at Tc | β | 118 A |
| Continuous Drain Current (Id) at Ta | β | 16.7 A |
| Rds(on) max at Vgs=10V | β | 3.6 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 3.5 V (max) |
| Technology | β | Trench MOSFET, OptiMOS 6 |
| Configuration | β | Single N-channel, Source-Down |