IQE036N08NM6ATMA1 vs ISC151N08NM6ATMA1 Vergleich

Detaillierter Direktvergleich von IQE036N08NM6ATMA1 von Infineon und ISC151N08NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
ISC151N08NM6ATMA1 ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8

ISC151N08NM6ATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IQE036N08NM6ATMA1 ISC151N08NM6ATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,92 $0,78
Manufacturer Infineon Technologies —
Product Family OptiMOS 6 —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Ta 16.7 A —
Continuous Drain Current (ID) at Tc 118 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V [DATA_NEEDED: RDS(on) at VGS=10V] —
On-Resistance RDS(on) typical 3.6 mΩ —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 125 W —
Gehäuse PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) PG-TDSON-8 FL
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -55°C to +150°C (junction, per datasheet) —
RoHS-Status Compliant Compliant
MSL-Level MSL1 (per JEDEC J-STD-020) —
Avalanche Energy Rated Yes (single-pulse, per datasheet) —
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (TA=25°C) — 9.2 A
Kontinuierlicher Drain-Strom (TC=25°C) — 37 A
Power Dissipation (TA) — 3 W
Power Dissipation (TC) — 48 W
On-Resistance RDS(on) max — 15.1 mΩ
Gate Threshold Voltage VGS(th) typ — 3.5 V
Technology — OptiMOS 6
Anzahl der Pins — 8
Channel Mode — Enhancement
Betriebstemperatur — -55 °C to +175 °C

Datenblätter & Ressourcen

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