IQE036N08NM6ATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of IQE036N08NM6ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE036N08NM6ATMA1
IQE036N08NM6ATMA1 - 80V OptiMOS 6 N-MOSFET, 3.6mΞ© | Infineon
IQE036N08NM6ATMA1 β ActiveInfineon
ISC151N08NM6ATMA1
ISC151N08NM6ATMA1 - 80V 37A N-Ch MOSFET | Infineon TDSON-8
ISC151N08NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IQE036N08NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.78 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 6 | β |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Ta | 16.7 A | β |
| Continuous Drain Current (ID) at Tc | 118 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| On-Resistance RDS(on) typical | 3.6 mΞ© | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | β |
| Power Dissipation at Ta | 2.5 W | β |
| Power Dissipation at Tc | 125 W | β |
| Package | PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) | PG-TDSON-8 FL |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55Β°C to +150Β°C (junction, per datasheet) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) | β |
| Avalanche Energy Rated | Yes (single-pulse, per datasheet) | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 80 V |
| Continuous Drain Current (TA=25Β°C) | β | 9.2 A |
| Continuous Drain Current (TC=25Β°C) | β | 37 A |
| Power Dissipation (TA) | β | 3 W |
| Power Dissipation (TC) | β | 48 W |
| On-Resistance RDS(on) max | β | 15.1 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 3.5 V |
| Technology | β | OptiMOS 6 |
| Number of Pins | β | 8 |
| Channel Mode | β | Enhancement |
| Operating Temperature | β | -55 Β°C to +175 Β°C |