IQE036N08NM6CGATMA1 vs IQE022N06LM5CGATMA1 Vergleich
Detaillierter Direktvergleich von IQE036N08NM6CGATMA1 von Infineon und IQE022N06LM5CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΩ | Infineon
IQE022N06LM5CGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE036N08NM6CGATMA1 | IQE022N06LM5CGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,82 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 2.5 W | — |
| Betriebstemperaturbereich | -55 C to +175 C (junction, Tj) | -55C to +150C |
| Gehäuse | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | — |
| RoHS-Status | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | N-Channel Power MOSFET (Enhancement Mode) |
| Configuration | Single N-channel, Source-Down | — |
| Part Family | — | OptiMOS 5 |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D) at T_A=25C | — | 24 A |
| Continuous Drain Current (I_D) at T_C=25C | — | 151 A |
| R_DS(on) (typical, V_GS=10V) | — | 2.2 mΩ |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G value] |
| Power Dissipation (T_A) | — | 2.5 W |
| Power Dissipation (T_C) | — | 100 W |
| Pin-Anzahl | — | 9 (with exposed thermal pad) |
| Lead-Free | — | Yes |