IQE036N08NM6CGATMA1 vs IQE022N06LM5CGATMA1 Comparaison
Comparaison détaillée côte à côte de IQE036N08NM6CGATMA1 par Infineon et IQE022N06LM5CGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΩ | Infineon
IQE022N06LM5CGATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IQE036N08NM6CGATMA1 | IQE022N06LM5CGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,82 | $0,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 2.5 W | — |
| Plage de température de fonctionnement | -55 C to +175 C (junction, Tj) | -55C to +150C |
| Boîtier | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | MSL1 (per JEDEC J-STD-020) | — |
| Statut RoHS | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | N-Channel Power MOSFET (Enhancement Mode) |
| Configuration | Single N-channel, Source-Down | — |
| Part Family | — | OptiMOS 5 |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D) at T_A=25C | — | 24 A |
| Continuous Drain Current (I_D) at T_C=25C | — | 151 A |
| R_DS(on) (typical, V_GS=10V) | — | 2.2 mΩ |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G value] |
| Power Dissipation (T_A) | — | 2.5 W |
| Power Dissipation (T_C) | — | 100 W |
| Nombre de broches | — | 9 (with exposed thermal pad) |
| Lead-Free | — | Yes |