IQE036N08NM6CGSCATMA1 vs IQE008N03LM5SCATMA1 Vergleich
Detaillierter Direktvergleich von IQE036N08NM6CGSCATMA1 von Infineon und IQE008N03LM5SCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon
IQE036N08NM6CGSCATMA1 ✓ Aktiv
Spezifikationsvergleich
| Parameter | IQE036N08NM6CGSCATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,88 | $1,18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current (ID) at TA | 16.7 A | — |
| Continuous Drain Current (ID) at TC | 118 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 125 W | — |
| Montageart | Surface Mount | Surface Mount |
| Gehäuse / Bauform | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) | — |
| Technology | Trench MOSFET (OptiMOS 6) | Trench MOSFET (N-Channel) |
| Configuration | Source Down, Center Gate, Dual-Side Cooling | Single N-Channel |
| Betriebstemperaturbereich | -55 C to +150 C (junction, per datasheet derating curves) | -55 °C to +150 °C |
| Packing | Tape and Reel (suffix ATMA1) | — |
| Voltage Rating | 60 V to 100 V category (80 V nominal) | — |
| RoHS-Status | Compliant | Compliant |
| Product Family | — | OptiMOS 5 |
| Continuous Drain Current (ID) | — | 252 A |
| On-Resistance (RDS(on)) max | — | 0.85 mΩ at VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typical) |
| Gate Drive Voltage | — | 10 V (recommended) |
| Gehäuse | — | PG-WHSON-8 (Source-Down) |
| Cooling Architecture | — | Source-Down, dual-side cooling |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |