IQE036N08NM6CGSCATMA1 vs IQE008N03LM5SCATMA1 比較
詳細な並列比較: IQE036N08NM6CGSCATMA1 メーカー: Infineon および IQE008N03LM5SCATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IQE036N08NM6CGSCATMA1 | IQE008N03LM5SCATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.88 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 6 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 30 V |
| Continuous Drain Current (ID) at TA | 16.7 A | — |
| Continuous Drain Current (ID) at TC | 118 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 125 W | — |
| 実装タイプ | Surface Mount | Surface Mount |
| パッケージ / ケース | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm) | — |
| Technology | Trench MOSFET (OptiMOS 6) | Trench MOSFET (N-Channel) |
| Configuration | Source Down, Center Gate, Dual-Side Cooling | Single N-Channel |
| 動作温度範囲 | -55 C to +150 C (junction, per datasheet derating curves) | -55 °C to +150 °C |
| Packing | Tape and Reel (suffix ATMA1) | — |
| Voltage Rating | 60 V to 100 V category (80 V nominal) | — |
| RoHS ステータス | Compliant | Compliant |
| Product Family | — | OptiMOS 5 |
| Continuous Drain Current (ID) | — | 252 A |
| On-Resistance (RDS(on)) max | — | 0.85 mΩ at VGS = 10 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typical) |
| Gate Drive Voltage | — | 10 V (recommended) |
| パッケージ | — | PG-WHSON-8 (Source-Down) |
| Cooling Architecture | — | Source-Down, dual-side cooling |
| MSLレベル | — | [DATA_NEEDED: MSL rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |