IQE220N15NM5ATMA1 vs IPTC054N15NM5ATMA1 Vergleich
Detaillierter Direktvergleich von IQE220N15NM5ATMA1 von Infineon und IPTC054N15NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΩ OptiMOS 5 MOSFET | Infineon
IPTC054N15NM5ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE220N15NM5ATMA1 | IPTC054N15NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,84 | $1,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at Ta | 7 A | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| RDS(on) Max at VGS=10V | 22 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 µA) | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | 14.4 nC at 10 V | — |
| Input Capacitance (Ciss) | 14 pF | — |
| Output Capacitance (Coss) | 340 pF | — |
| Ausgangskonfiguration | Single N-Channel | — |
| Gehäuse | PG-TSON-8-5 (Source-Down) | PG-HDSOP-16-2 (16-pin top-cooled) |
| Montageart | Surface Mount | Surface Mount (top-side cooled) |
| Betriebstemperatur | -55C to +150C (junction) | — |
| Technology | Trench MOSFET (OptiMOS 5) | — |
| RoHS-Status | Compliant | Compliant |
| MSL-Level | 1 | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS 5 (IPT family) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TA=25°C | — | 17.5 A |
| Continuous Drain Current (ID) at TC=25°C | — | 143 A |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Power Dissipation (PD) at TC=25°C | — | 250 W |
| On-Resistance RDS(on) at VGS=10V, ID=50A | — | 5.4 mΩ |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Total Gate Charge (Qg) typical | — | 58 nC |
| Forward Body Diode Voltage (VSD) | — | 0.83 V |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| Lead-Free | — | Yes |