IQE220N15NM5ATMA1 vs IPTC054N15NM5ATMA1 Сравнение
Подробное сравнение бок о бок IQE220N15NM5ATMA1 от Infineon и IPTC054N15NM5ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPTC054N15NM5ATMA1 - 150V 143A 5.4mΩ OptiMOS 5 MOSFET | Infineon
IPTC054N15NM5ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IQE220N15NM5ATMA1 | IPTC054N15NM5ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,84 | $1,52 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 Power-Transistor | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at Ta | 7 A | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 100 W | — |
| RDS(on) Max at VGS=10V | 22 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V (typ at 46 µA) | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | 14.4 nC at 10 V | — |
| Input Capacitance (Ciss) | 14 pF | — |
| Output Capacitance (Coss) | 340 pF | — |
| Выходная конфигурация | Single N-Channel | — |
| Корпус | PG-TSON-8-5 (Source-Down) | PG-HDSOP-16-2 (16-pin top-cooled) |
| Тип монтажа | Surface Mount | Surface Mount (top-side cooled) |
| Рабочая температура | -55C to +150C (junction) | — |
| Technology | Trench MOSFET (OptiMOS 5) | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 | [DATA_NEEDED: MSL rating] |
| Series | — | OptiMOS 5 (IPT family) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TA=25°C | — | 17.5 A |
| Continuous Drain Current (ID) at TC=25°C | — | 143 A |
| Power Dissipation (PD) at TA=25°C | — | 3.8 W |
| Power Dissipation (PD) at TC=25°C | — | 250 W |
| On-Resistance RDS(on) at VGS=10V, ID=50A | — | 5.4 mΩ |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Total Gate Charge (Qg) typical | — | 58 nC |
| Forward Body Diode Voltage (VSD) | — | 0.83 V |
| Рабочая температура перехода | — | -55 °C to +175 °C |
| Lead-Free | — | Yes |