IQE220N15NM5CGATMA1 vs IQE220N15NM5ATMA1 Vergleich
Detaillierter Direktvergleich von IQE220N15NM5CGATMA1 von Infineon und IQE220N15NM5ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE220N15NM5CGATMA1 - 150V 44A N-Ch OptiMOS 5 MOSFET | Infineon
IQE220N15NM5CGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE220N15NM5CGATMA1 | IQE220N15NM5ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,55 | $0,84 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Tc | 44 A | 44 A |
| Continuous Drain Current (ID) at Ta | [DATA_NEEDED: ID at Ta] | 7 A |
| On-State Resistance RDS(on) max | 22 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 100 W | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Gehäuse | PG-TTFN-9-3 (Source-Down) | PG-TSON-8-5 (Source-Down) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +175C (estimated from Tj max) | — |
| Technology | Trench MOSFET, OptiMOS 5 | Trench MOSFET (OptiMOS 5) |
| MSL-Level | 1 (per JEDEC J-STD-020) | 1 |
| RoHS-Status | Compliant | Compliant |
| Pin-Anzahl | 9 (TTFN) | — |
| Product Family | — | OptiMOS 5 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Power Dissipation (PD) at Ta | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 100 W |
| RDS(on) Max at VGS=10V | — | 22 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 4.6 V (typ at 46 µA) |
| Total Gate Charge (Qg) | — | 14.4 nC at 10 V |
| Input Capacitance (Ciss) | — | 14 pF |
| Output Capacitance (Coss) | — | 340 pF |
| Ausgangskonfiguration | — | Single N-Channel |
| Betriebstemperatur | — | -55C to +150C (junction) |