IQE220N15NM5CGSCATMA1 vs IQE008N03LM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQE220N15NM5CGSCATMA1 von Infineon und IQE008N03LM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ AktivInfineon
IQE008N03LM5CGSCATMA1 - 30V 0.85mOhm Dual N-MOSFET | Infineon
IQE008N03LM5CGSCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE220N15NM5CGSCATMA1 | IQE008N03LM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,18 | $2,10 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current at Ta (ID) | 7 A | — |
| Continuous Drain Current at Tc (ID) | 44 A | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 100 W | — |
| On-Resistance (RDS(on)) | 22 milliohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | 2 V (typ) |
| Gehäuse | PG-WHTFN-9 (Source-Down) | PG-WHTFN-9 (WHTFN) |
| Montageart | Surface Mount | Surface Mount (top + bottom cooling) |
| Technology | OptiMOS 5, Source-Down | Trench MOSFET (OptiMOS 5) |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55C to +150C (junction) |
| RoHS-Status | Compliant | Compliant |
| Product Family | — | OptiMOS 5 |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) Max | — | 252 A (per channel, case-temperature limited) |
| On-Resistance (RDS(on)) Max | — | 0.85 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS maximum rating] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Polarity | — | N-Channel |
| Anzahl der Pins | — | 9 (WHTFN with exposed thermal pads) |
| MSL-Level | — | 1 (per JEDEC J-STD-020, typical for Infineon Power-SMD packages) |
| Halogenfrei | — | Yes (Infineon standard for OptiMOS 5) |