IQE220N15NM5SCATMA1 vs IQE220N15NM5CGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQE220N15NM5SCATMA1 von Infineon und IQE220N15NM5CGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQE220N15NM5SCATMA1 - 150V 44A OptiMOS 5 Source-Down N-MOSFET | Infineon
IQE220N15NM5SCATMA1 ✓ AktivInfineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQE220N15NM5SCATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $2,18 |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (Trench >=100V) | OptiMOS 5, Source-Down |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) at Ta | 7 A | — |
| Continuous Drain Current (ID) at Tc | 44 A | — |
| On-State Resistance (RDS(on)) max | 22 mOhm | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 100 W | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Gehäuse | PG-WHSON-8-1 (Source-Down) | PG-WHTFN-9 (Source-Down) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (junction) | -55C to +150C (junction) |
| Anzahl der Pins | 8 | — |
| MSL-Level | 1 | — |
| RoHS-Status | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Continuous Drain Current at Ta (ID) | — | 7 A |
| Continuous Drain Current at Tc (ID) | — | 44 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 100 W |
| On-Resistance (RDS(on)) | — | 22 milliohm (max) |
| Gate Threshold Voltage (VGS(th)) | — | 4.6 V |