IQE220N15NM5SCATMA1 vs IQE220N15NM5CGSCATMA1 Comparison

Detailed side-by-side comparison of IQE220N15NM5SCATMA1 by Infineon and IQE220N15NM5CGSCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQE220N15NM5SCATMA1

IQE220N15NM5SCATMA1 - 150V 44A OptiMOS 5 Source-Down N-MOSFET | Infineon

IQE220N15NM5SCATMA1 βœ“ Active
Infineon
IQE220N15NM5CGSCATMA1

IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon

IQE220N15NM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQE220N15NM5SCATMA1 IQE220N15NM5CGSCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.78 $2.18
FET Type N-Channel N-Channel
Technology OptiMOS 5 (Trench >=100V) OptiMOS 5, Source-Down
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Ta 7 A β€”
Continuous Drain Current (ID) at Tc 44 A β€”
On-State Resistance (RDS(on)) max 22 mOhm β€”
Power Dissipation (Ta) 2.5 W β€”
Power Dissipation (Tc) 100 W β€”
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] β€”
Gate Charge (Qg) [DATA_NEEDED: Qg total] β€”
Package PG-WHSON-8-1 (Source-Down) PG-WHTFN-9 (Source-Down)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) -55C to +150C (junction)
Number of Pins 8 β€”
MSL Level 1 β€”
RoHS Status Compliant Compliant
Avalanche Rated Yes β€”
Configuration Single β€”
Manufacturer β€” Infineon Technologies
Series β€” OptiMOS 5
Continuous Drain Current at Ta (ID) β€” 7 A
Continuous Drain Current at Tc (ID) β€” 44 A
Power Dissipation at Ta (PD) β€” 2.5 W
Power Dissipation at Tc (PD) β€” 100 W
On-Resistance (RDS(on)) β€” 22 milliohm (max)
Gate Threshold Voltage (VGS(th)) β€” 4.6 V

Datasheets & Resources

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