IQEH50NE2LM7UCGSCATMA1 vs IQE050N08NM5CGATMA1 Vergleich

Detaillierter Direktvergleich von IQEH50NE2LM7UCGSCATMA1 von Infineon und IQE050N08NM5CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Infineon
IQEH50NE2LM7UCGSCATMA1 IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 ✓ Aktiv

Spezifikationsvergleich

Parameter IQEH50NE2LM7UCGSCATMA1 IQE050N08NM5CGATMA1
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,78 $1,75
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
Transistortyp N-Channel MOSFET —
Drain-Source Voltage (VDS) Max 25 V —
Continuous Drain Current (ID) at TA 54 A —
Continuous Drain Current (ID) at TC 422 A —
RDS(on) Max 0.5 mΩ —
Gate Threshold Voltage (VGS(th)) typ 2 V —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 150 W —
Maximum Junction Temperature 175 °C —
Gehäuse PG-WHTFN-9-1 (surface mount) PG-TTFN-9-1 (Surface Mount)
Montageart Surface Mount Surface Mount
Series OptiMOS 7 —
Technology Silicon N-Channel Power MOSFET OptiMOS 5 (Source-Down)
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (Ta) — 16 A
Continuous Drain Current (Tc) — 101 A
On-Resistance RDS(on) Max — 5.0 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 100 W
Gate Threshold Vgs(th) Typ — [DATA_NEEDED: Vgs(th) typical value]
Betriebstemperatur — -55°C to +175°C (TJ max)
Total Gate Charge Qg Typ — [DATA_NEEDED: total gate charge Qg typical]
RoHS-Status — Compliant
MSL-Level — [DATA_NEEDED: MSL rating]

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern