IQEH68NE2LM7UCGATMA1 vs IQD020N10NM5CGATMA1 Vergleich
Detaillierter Direktvergleich von IQEH68NE2LM7UCGATMA1 von Infineon und IQD020N10NM5CGATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 ✓ AktivInfineon
IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon
IQD020N10NM5CGATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQEH68NE2LM7UCGATMA1 | IQD020N10NM5CGATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,35 | $1,28 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| Transistortyp | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | 100 V |
| Continuous Drain Current (ID) @ Ta | 47 A | — |
| Pulsed Drain Current (IDM) @ Tc | 338 A | — |
| Power Dissipation (PD) @ Ta | 2.5 W | — |
| Power Dissipation (PD) @ Tc | 130 W | — |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | — |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | — |
| Maximum Junction Temperature | 175 °C | — |
| Betriebstemperaturbereich | -55 °C to +175 °C (typical for OptiMOS 7) | -55°C to +175°C |
| Gehäuse | PG-TTFN-9-3 (surface mount) | PG-TTFN-9-U02 (PQFN 5x6 mm²) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating from datasheet] |
| RoHS-Status | Compliant (per distributor listing) | Compliant |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS™ 5 N-channel trench MOSFET |
| Packaging | Tape & Reel (per ATMA1 suffix) | — |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | — | 26 A |
| Continuous Drain Current (ID) at TC=25°C | — | [DATA_NEEDED: ID at TC=25°C from datasheet curve] |
| Pulsed Drain Current (IDM) at TC=25°C | — | 273 A |
| Static Drain-Source On-Resistance RDS(on) max | — | 2.0 mΩ (at VGS=10V) |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 333 W |
| Qualification | — | Industrial grade (Infineon OptiMOS™ 5 family) |