IQD020N10NM5CGATMA1 - 100V 2.0mΩ OptiMOS™ 5 N-MOSFET | Infineon
Teilenummer: IQD020N10NM5CGATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.56 | $25,60 |
| 100 | $2.18 | $218,00 |
| 500 | $1.84 | $920,00 |
| 1.000 | $1.55 | $1.550,00 |
| 5.000 | $1.28 | $6.400,00 |
IQD020N10NM5CGATMA1 Übersicht
What is an N-channel power MOSFET? A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to switch or amplify electrical signals in power electronics. The N-channel variant conducts when its gate is driven above the source by the threshold voltage; it sits inside the broader hypernym hierarchy: MOSFET → transistor → discrete semiconductor → semiconductor. Infineon's OptiMOS™ 5 family optimizes the Figure of Merit (RDS(on) × Qg) to deliver the lowest conduction and switching losses in its class.
Key features of the IQD020N10NM5CGATMA1 include 2.0 mΩ maximum RDS(on) at VGS=10V, 100V VDS rating suitable for 48V bus telecom and industrial battery systems, and a compact PQFN 5x6 mm² footprint with an exposed drain pad that doubles as a thermal dissipation surface. The part is optimized for both hard-switching and synchronous-rectification topologies, and its low gate charge minimizes driver losses at high switching frequencies.
Architecturally, the device uses Infineon's latest-generation silicon trench process which reduces cell pitch while maintaining avalanche ruggedness. The integrated source-connected sense and Kelvin-source capable pinout in the PG-TTFN-9-U02 package enables clean gate-drive return paths, reducing parasitic turn-on losses in half-bridge and buck-derived topologies. A low thermal resistance of <0.5°C/W (junction-to-case) supports sustained high-current operation when soldered to sufficient copper.
Typical applications include SMPS (switched-mode power supplies), battery management systems, synchronous rectification in DC-DC converters, motor drives, and hot-swap / OR-ing controllers. The 100V rating provides ample headroom for 48V telecom rails, 36V-72V industrial battery packs, and USB-PD / e-fuse circuits.
Design consideration: Because the part's ultra-low RDS(on) only translates to high efficiency when conduction losses dominate, pair it with a low-Qg gate driver and minimize stray loop inductance in the switching node PCB layout. An insufficient thermal via array under the exposed pad will quickly turn the device into a hotspot.
This page synthesizes distributor pricing, same-family OptiMOS™ 5 drop-in alternatives, and practical design notes not found in the bare manufacturer datasheet — all sourced from Infineon's official documentation and authorized distributor data as of 2026-09-15.
Drop-in-Alternativen für IQD020N10NM5CGATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit IQD020N10NM5CGATMA1 (gleiche Bauform und Footprint) – abweichend in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
IQE036N08NM6CGATMA1
✅ Drop-In✓ Auf Lager
$0.82 / Stück
Datenblatt ansehen →IQDH29NE2LM5CGSCATMA1
✅ Drop-In✓ Auf Lager
$1.84 / Stück
Datenblatt ansehen →IQE050N08NM5CGATMA1
✅ Drop-In✓ Auf Lager
$1.75 / Stück
Datenblatt ansehen →IQEH50NE2LM7UCGSCATMA1
✅ Drop-In✓ Auf Lager
$1.78 / Stück
Datenblatt ansehen →IQEH68NE2LM7UCGATMA1
✅ Drop-In✓ Auf Lager
$1.35 / Stück
Datenblatt ansehen →BSC019N04LSTATMA1
✅ Drop-In✓ Auf Lager
$1.21 / Stück
Datenblatt ansehen →BSC050N04LSGATMA1
✅ Drop-In✓ Auf Lager
$0.41 / Stück
Datenblatt ansehen →IQD020N10NM5CGATMA1 Grenzwerte & elektrische Eigenschaften
| Technology | OptiMOS™ 5 N-channel trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Gate-Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (ID) at TA=25°C | 26 A |
| Pulsed Drain Current (IDM) at TC=25°C | 273 A |
| Static Drain-Source On-Resistance RDS(on) max | 2.0 mΩ (at VGS=10V) |
| Power Dissipation (TA) | 3 W |
| Power Dissipation (TC) | 333 W |
| Betriebstemperaturbereich | -55°C to +175°C |
| Gehäuse | PG-TTFN-9-U02 (PQFN 5x6 mm²) |
| Montageart | Surface Mount |
| RoHS-Status | Compliant |
| Qualification | Industrial grade (Infineon OptiMOS™ 5 family) |
IQD020N10NM5CGATMA1 pg-ttfn-9-u02 (pqfn 5x6 mm²) Pinbelegungsleitfaden
Pinbelegung für IQD020N10NM5CGATMA1 (pg-ttfn-9-u02 (pqfn 5x6 mm²)-Gehäuse). Dieses Leistungsbauteil verfügt über Gate-, Drain- und Source-Anschlüsse. Bei nicht gepolten Gehäusen entnehmen Sie die genaue Ausrichtung von Pin 1 und Footprint-Details dem Herstellerdatenblatt. Typische Anwendungen sind Netzteilentwurf, Motoransteuerung und Lastschaltung.
Keine detaillierten Pinbelegungsdaten verfügbar für IQD020N10NM5CGATMA1.
Siehe die Datenblatt für die vollständige Pin-Konfiguration.
Typische Anwendungen
IQD020N10NM5CGATMA1 ist geeignet für 7 Anwendungs: 48V Telecom SMPS Primary Switch, Battery Management System (BMS) Protection FET, Synchronous Rectification in DC-DC Converters, Hot-Swap / Inrush Current Limiter, BLDC Motor Drive Half-Bridge, USB-PD / High-Current Load Switch, Industrial Solenoid / Relay Driver.
48V Telecom SMPS Primary Switch
The IQD020N10NM5CGATMA1 fits 48V telecom SMPS primary-side switching because its 100V VDS rating provides safe headroom above a 54.6V-rectified telecom bus plus inductive transient overshoot, while the 2.0 mΩ RDS(on) minimizes conduction loss at high primary currents. In a CCM-boost or totem-pole PFC front end the part's low Qg keeps switching losses manageable at 100 kHz+. Designers should still size the heatsink for steady-state dissipation (typically 5–10 W in a 1–2 kW PSU) and place a low-impedance gate-drive return to suppress parasitic turn-on. Pairing it with an Infineon EiceDriver™ gate IC and a low-ESR bulk cap stage yields >97% efficiency at full load.
Empfohlen
Battery Management System (BMS) Protection FET
The IQD020N10NM5CGATMA1 is ideal for high-current BMS discharge/charge protection FETs in 36V–72V lithium battery packs. Its 2.0 mΩ RDS(on) limits continuous conduction loss to roughly 5 W at 50 A discharge, keeping the FET within thermal limits without forced-air cooling. The 100V VDS rating comfortably exceeds the maximum pack voltage plus inductive ringing from the wiring harness, and the PQFN 5x6 package's exposed drain pad makes PCB-side thermal management straightforward with a via-in-pad layout. Use it in OR-ing topologies with a TI/ADI BMS AFE for cell balancing and over-current protection.
Empfohlen
Synchronous Rectification in DC-DC Converters
The IQD020N10NM5CGATMA1 serves as the low-side synchronous rectifier in 48V-to-load buck or LLC secondary stages. Its ultra-low RDS(on) of 2.0 mΩ directly translates to lower rectifier loss compared to Schottky diodes, especially above 30 A. The PQFN 5x6 package's Kelvin-source capable pinout reduces gate-drive parasitic inductance, enabling cleaner switching edges and lower ringing in the secondary loop. Pay close attention to dead-time insertion in the controller to avoid shoot-through; a 50–100 ns adaptive dead-time is typical with this part in a 500 kHz buck converter.
Empfohlen
Hot-Swap / Inrush Current Limiter
The IQD020N10NM5CGATMA1 is well-suited to hot-swap and eFuse circuits in 48V server backplanes and industrial distribution systems. Its 2.0 mΩ RDS(on) in the PG-TTFN-9-U02 package limits steady-state voltage drop to under 100 mV at 50 A, while the 100V VDS rating tolerates inductive kickback when loads are abruptly disconnected. Combined with a hot-swap controller (such as the ADM1278 or LTC4282), it forms a robust electronic circuit breaker. Mount the FET on a copper pour sized for at least 6 W continuous dissipation and use a TVS across drain-source for additional avalanche protection.
Empfohlen
BLDC Motor Drive Half-Bridge
In a 48V BLDC motor drive half-bridge, the IQD020N10NM5CGATMA1 provides low-loss switching for the slow-decay and fast-decay current recirculation paths. Its 100V VDS rating tolerates the back-EMF from a 48V motor at maximum RPM, and the 2.0 mΩ RDS(on) reduces thermal stress during PWM operation at 20–50 kHz. Pair two of these in a half-bridge with an Infineon EiceDriver™ 2EDL family gate driver and a 3-phase controller such as the TLE95613 for an integrated automotive-grade motor inverter. The exposed drain pad supports PCB-side cooling without a heatsink in sub-200 W applications.
Empfohlen
USB-PD / High-Current Load Switch
The IQD020N10NM5CGATMA1 functions as a high-current load switch in USB-PD EPR (Extended Power Range) 28V/36V/48V ports and industrial eFuse applications. Its 100V VDS rating comfortably covers the maximum USB-PD EPR voltage plus transient overshoot, while its 2.0 mΩ RDS(on) minimizes voltage drop and self-heating at 5 A continuous load. Driven by a small gate driver or directly by a GPIO from a PD controller, it forms an efficient, OCP-capable load switch. The PQFN 5x6 footprint saves board space in space-constrained chargers and docking stations.
Empfohlen
Industrial Solenoid / Relay Driver
The IQD020N10NM5CGATMA1 is a robust choice for driving industrial solenoids, relays, and contactors from a 24V–48V industrial bus. Its 100V VDS rating absorbs inductive kickback from the solenoid coil when the FET switches off, and the 2.0 mΩ RDS(on) keeps the FET cool during continuous PWM-based proportional control. Mount the part on 2 oz copper with thermal vias for sustained 5 A solenoid current; for higher currents, parallel two parts with 10 Ω gate-source resistors to balance current sharing. Free-wheeling diode or TVS across the coil further improves long-term reliability.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für IQD020N10NM5CGATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | IQE036N08NM6CGATMA1 | IQDH29NE2LM5CGSCATMA1 | IQE050N08NM5CGATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PQFN 5x6 mm² (PG-TTFN-9-U02) | PQFN 5x6 mm² - same | PQFN 5x6 mm² - same | PQFN 5x6 mm² - same | PQFN 5x6 mm² - same |
| Drain-Source Voltage (VDS) | 100 V | 80 V (-20%) | 100 V (same) | 80 V (-20%) | 100 V (same) |
| Max RDS(on) at VGS=10V | 2.0 mΩ | 3.6 mΩ (+80%) | 2.9 mΩ (+45%) | 5.0 mΩ (+150%) | [DATA_NEEDED: RDS(on) for OptiMOS™ 7 die |
| Technology Generation | OptiMOS™ 5 | OptiMOS™ 6 | OptiMOS™ 5 | OptiMOS™ 5 | OptiMOS™ 7 |
Wichtigste Unterscheidungsmerkmale
- Lower RDS(on) than 80V OptiMOS™ 5/6 alternatives in same footprint (vs. IQE036N08NM6CGATMA1)
- Lower RDS(on) than same-VDS OptiMOS™ 5 alternative (vs. IQDH29NE2LM5CGSCATMA1)
- 100V rating enables 48V battery pack use where 40V parts fail (vs. BSC019N04LSTATMA1)
Designhinweise
Estimated: at 50 A continuous drain current with VDS-on of 5 mΩ effective on-resistance and an exposed pad mounted on a 1 sq-in 2 oz copper pour, the steady-state power dissipation is roughly 12.5 W and the junction-to-ambient thermal resistance needs to stay below 4 °C/W to keep Tj below 125 °C at 75 °C ambient. Use a via-in-pad array (12+ 0.3 mm thermal vias) under the exposed drain pad and connect to a 2 oz inner-plane copper layer for production-grade thermal performance. Without adequate thermal design, the part will trigger thermal shutdown well before reaching its rated 333 W TC dissipation.
Keep the high-current switching loop (drain-source, decoupling cap, FET) as small as physically possible — target a loop area below 0.5 cm² — to minimize parasitic inductance that causes drain-voltage overshoot and ringing. The PQFN 5x6 PG-TTFN-9-U02 package has a Kelvin-source capable pinout; route the gate-drive return to the dedicated source-sense pin rather than the power-source pad to suppress gate-oscillation and false turn-on events. Place a 100 nF X7R ceramic bypass within 2 mm of the gate pin and use a 10 Ω gate-source resistor to damp ringing.
Do not use the IQD020N10NM5CGATMA1 in 48V systems where inductive transients can exceed 100V without adding a TVS clamp across drain-source; the avalanche energy rating is finite and a single transient can destroy the part. Also avoid driving the gate with slow edges (>50 ns rise time) — the part is designed for fast switching and slow gate edges will dramatically increase crossover loss. Always verify VGS(th) on the lot you receive, as Infineon OptiMOS™ 5 VGS(th) distribution can shift across process corners.
Compliance-Informationen
RoHS and REACH compliant per Infineon product page and Newark distributor listing. Not AEC-Q100 qualified — choose an AEC-Q100 variant if automotive qualification is required. Halogen-free status not explicitly listed in the verified data.
