IQEH68NE2LM7UCGATMA1 vs IQEH50NE2LM7UCGSCATMA1 Vergleich
Detaillierter Direktvergleich von IQEH68NE2LM7UCGATMA1 von Infineon und IQEH50NE2LM7UCGSCATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 ✓ AktivInfineon
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IQEH68NE2LM7UCGATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,35 | $1,78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 7 |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) @ Ta | 47 A | — |
| Pulsed Drain Current (IDM) @ Tc | 338 A | — |
| Power Dissipation (PD) @ Ta | 2.5 W | — |
| Power Dissipation (PD) @ Tc | 130 W | — |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | — |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | — |
| Maximum Junction Temperature | 175 °C | 175 °C |
| Betriebstemperaturbereich | -55 °C to +175 °C (typical for OptiMOS 7) | — |
| Gehäuse | PG-TTFN-9-3 (surface mount) | PG-WHTFN-9-1 (surface mount) |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | [DATA_NEEDED: MSL Level] | — |
| RoHS-Status | Compliant (per distributor listing) | — |
| Technology | OptiMOS 7 trench MOSFET | Silicon N-Channel Power MOSFET |
| Packaging | Tape & Reel (per ATMA1 suffix) | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Drain-Source Voltage (VDS) Max | — | 25 V |
| Continuous Drain Current (ID) at TA | — | 54 A |
| Continuous Drain Current (ID) at TC | — | 422 A |
| RDS(on) Max | — | 0.5 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | — | 2 V |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 150 W |