IQEH68NE2LM7UCGATMA1 vs IQEH50NE2LM7UCGSCATMA1 对比
详细并排对比 IQEH68NE2LM7UCGATMA1 出自 Infineon 和 IQEH50NE2LM7UCGSCATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IQEH68NE2LM7UCGATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.35 | $1.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 7 |
| 晶体管类型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) @ Ta | 47 A | — |
| Pulsed Drain Current (IDM) @ Tc | 338 A | — |
| Power Dissipation (PD) @ Ta | 2.5 W | — |
| Power Dissipation (PD) @ Tc | 130 W | — |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | — |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | — |
| Maximum Junction Temperature | 175 °C | 175 °C |
| 工作温度范围 | -55 °C to +175 °C (typical for OptiMOS 7) | — |
| 封装 | PG-TTFN-9-3 (surface mount) | PG-WHTFN-9-1 (surface mount) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | [DATA_NEEDED: MSL Level] | — |
| RoHS 状态 | Compliant (per distributor listing) | — |
| Technology | OptiMOS 7 trench MOSFET | Silicon N-Channel Power MOSFET |
| Packaging | Tape & Reel (per ATMA1 suffix) | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Drain-Source Voltage (VDS) Max | — | 25 V |
| Continuous Drain Current (ID) at TA | — | 54 A |
| Continuous Drain Current (ID) at TC | — | 422 A |
| RDS(on) Max | — | 0.5 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | — | 2 V |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 150 W |