IR2101PBF vs IR2110SPBF Vergleich

Detaillierter Direktvergleich von IR2101PBF von Infineon und IR2110SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR2101PBF IR2110SPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,78 $1,98
Configuration Half-Bridge (High and Low Side) —
Input Type Non-Inverting —
Number of Drivers 2 (High-Side + Low-Side) —
Anzahl der Ausgänge 2 —
Supply Voltage (VCC/VBS) 10 V to 20 V —
Logic Input Compatibility 3.3 V, 5 V, 15 V CMOS/LSTTL 3.3 V CMOS / LSTTL
Peak Source Current 0.21 A (210 mA) —
Peak Sink Current 0.36 A —
Offset (High-Side) Voltage Up to +600 V —
Propagation Delay 160 ns —
Undervoltage Lockout Yes —
dV/dt Immunity Yes (negative transient tolerant) —
Betriebstemperatur -40C to +125C —
Gehäuse 8-PDIP (0.300 inch, 7.62 mm) 16-pin SOIC (SO-16, DW suffix)
Montageart Through-Hole Surface Mount
Packaging Tube —
RoHS-Status Compliant (Pb-free PBF suffix) —
Funktion — Half-bridge gate driver
Topologie — High-side and low-side referenced output channels
Number of Channels — 2 (1 high-side, 1 low-side)
Logic Type — Non-inverting
Maximum Offset Voltage (Voffset) — 500 V
Gate Drive Supply Voltage (Vcc/VCC) — 10 V to 20 V
Peak Output Current (source/sink) — 2.0 A / 2.0 A
Typical Propagation Delay (ton/toff) — 94 ns / 94 ns
Rise/Fall Time (typical) — 25 ns / 17 ns
Bootstrap Diode — Integrated
Undervoltage Lockout (UVLO) — Yes, both Vcc and VCC
Betriebstemperaturbereich — -40 C to +125 C
Technology — HVIC + latch-immune CMOS
Lead-Free / RoHS — Yes / Compliant (Pb-free PBF suffix)

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