IR2114SSTRPBF vs IRS2011STRPBF Vergleich

Detaillierter Direktvergleich von IR2114SSTRPBF von Infineon und IRS2011STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR2114SSTRPBF IRS2011STRPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,84 $1,55
Configuration Half-Bridge High-Side and Low-Side, Independent Channels
Driver Type High-side and Low-side Gate Driver —
Number of Drivers 2 —
Input Type Non-Inverting —
Supply Voltage (VCC) 11.5 V to 20 V 10 V to 20 V
Floating Channel Voltage 600 V (max) —
Peak Source Current 2 A (typical) —
Peak Sink Current 3 A (typical) —
Propagation Delay 440 ns (typical) —
Rise Time (typ) [DATA_NEEDED: rise time] —
Fall Time (typ) [DATA_NEEDED: fall time] —
Betriebstemperatur -40 C to +125 C -40 C to +125 C
Gehäuse / Bauform 24-SSOP (0.209, 5.30 mm Width) —
Montageart Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
MSL-Level [DATA_NEEDED: MSL level] —
RoHS-Status Compliant Compliant (PBF suffix)
Lead-Free Yes (PBF suffix indicates Pb-free) —
Protection Features DESAT short-circuit detection, soft over-current shutdown —
FAULT/SD Logic 3.3 V-compatible CMOS, bidirectional —
Funktion — Half-Bridge Gate Driver
Anzahl der Ausgänge — 2
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Logic Input Compatibility — 3.3 V CMOS / LSTTL
Bootstrap Supply — Integrated bootstrap diode, floating channel
Negative Transient Tolerance — Yes, dV/dt immune
Gehäuse — 8-SOIC (DSO-8)
Suitable Drivers — MOSFETs and IGBTs

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