IR2114SSTRPBF vs IRS2011STRPBF 对比

详细并排对比 IR2114SSTRPBF 出自 Infineon 和 IRS2011STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IRS2011STRPBF IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2011STRPBF ✓ 量产中

规格对比

参数 IR2114SSTRPBF IRS2011STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.84 $1.55
Configuration Half-Bridge High-Side and Low-Side, Independent Channels
Driver Type High-side and Low-side Gate Driver —
Number of Drivers 2 —
Input Type Non-Inverting —
Supply Voltage (VCC) 11.5 V to 20 V 10 V to 20 V
Floating Channel Voltage 600 V (max) —
Peak Source Current 2 A (typical) —
Peak Sink Current 3 A (typical) —
Propagation Delay 440 ns (typical) —
Rise Time (typ) [DATA_NEEDED: rise time] —
Fall Time (typ) [DATA_NEEDED: fall time] —
工作温度 -40 C to +125 C -40 C to +125 C
封装 / 外壳 24-SSOP (0.209, 5.30 mm Width) —
安装类型 Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
MSL 等级 [DATA_NEEDED: MSL level] —
RoHS 状态 Compliant Compliant (PBF suffix)
Lead-Free Yes (PBF suffix indicates Pb-free) —
Protection Features DESAT short-circuit detection, soft over-current shutdown —
FAULT/SD Logic 3.3 V-compatible CMOS, bidirectional —
功能 — Half-Bridge Gate Driver
输出数量 — 2
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Logic Input Compatibility — 3.3 V CMOS / LSTTL
Bootstrap Supply — Integrated bootstrap diode, floating channel
Negative Transient Tolerance — Yes, dV/dt immune
封装 — 8-SOIC (DSO-8)
Suitable Drivers — MOSFETs and IGBTs

数据手册与资源

浏览全部产品 创建 BOM 获取报价