IR21271SPBF vs IR21271STRPBF Vergleich

Detaillierter Direktvergleich von IR21271SPBF von Infineon und IR21271STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR21271SPBF IR21271STRPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,71 $1,82
Product Type Single-channel high-side gate driver with current sensing —
Technology HVIC and latch-immune CMOS —
Maximum Floating Supply Voltage 600 V —
Output Source Current 0.25 A —
Output Sink Current 0.5 A —
Gate Drive Voltage Range 9 V to 20 V (per related IR2127 datasheet family) —
Configuration High-side, low-side capable (floating channel) High-Side or Low-Side
Input Logic Compatibility 3.3 V CMOS / LSTTL —
Input Type Non-inverting —
Negative Transient Tolerance (dV/dt) Tolerant —
Bootstrap Operation Supported (floating channel) —
Integrated Current Sensing Yes —
Gehäuse 8-SOIC 8-SOIC (3.90 mm)
Lead Finish Lead-free (PbF) —
Betriebstemperaturbereich -40C to +125C (industrial) —
Montageart Surface Mount Surface Mount
RoHS-Status Compliant —
Number of Channels 1 —
Anzahl der Ausgänge — 1
Input Polarity — Non-Inverting
Supply Voltage (VCC) — 9 V to 20 V
High-Side Offset Voltage — 600 V max
Peak Source Current — 250 mA
Peak Sink Current — 500 mA
Propagation Delay — 200 ns typical
Anstiegszeit — [DATA_NEEDED: rise time]
Abfallzeit — [DATA_NEEDED: fall time]
Betriebstemperatur — -40C to +125C
Lead-Free / RoHS — Yes (Pb-Free, suffix PBF)
Integrated Current Sense — Yes (CS pin + shutdown)
dV/dt Immunity — Yes
Negative Transient Tolerance — Yes (high-side rail)

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