IR2132SPBF vs IRS2110SPBF Vergleich

Detaillierter Direktvergleich von IR2132SPBF von Infineon und IRS2110SPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR2132SPBF IRS2110SPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $5,55 $0,72
Part Number IR2132SPBF —
Manufacturer Infineon Technologies (formerly International Rectifier) —
Funktion Half-Bridge Gate Driver IC (3-phase, 6-channel) —
Configuration Inverting input —
Anzahl der Ausgänge 6 (3 high-side, 3 low-side) —
Maximum Offset Voltage (High-Side) 600 V —
Output Current (Source/Sink) 0.5 A —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Logic Input Compatibility CMOS/LSTTL, down to 2.5 V logic —
Typical Deadtime 0.8 us —
Undervoltage Lockout (UVLO) Yes, all 6 channels —
Bootstrap Design Required for high-side channels —
dV/dt Immunity Yes —
Negative VS Transient Tolerance Yes —
Gehäuse 28-SOIC (Wide Body, 7.50 mm) 16-SOIC (SOIC-16 W)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -40C to +125C -40 C to +125 C
Lead-Free / RoHS Yes (PbF suffix, RoHS compliant) —
Packaging Tube —
Topologie 3-phase bridge driver for MOSFETs/IGBTs —
Driver Type — High and Low Side, Half-Bridge
Number of Drivers — 2
Ausgangskonfiguration — Non-Inverting
Peak Source/Sink Current — 2.5 A / 2.5 A
Offset Voltage (High-Side) — Up to 500 V
Logic Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (25 V abs max)
Propagation Delay (typ.) — 120 ns
Rise Time (typ.) — 25 ns
Fall Time (typ.) — 17 ns
Undervoltage Lockout — Yes (VCC and VBS)
Input Logic Compatibility — TTL / CMOS with hysteresis
RoHS-Status — Compliant (Pb-free)
MSL-Level — 3

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern