IR2304SPBF vs IR2304STRPBF Vergleich

Detaillierter Direktvergleich von IR2304SPBF von Infineon und IR2304STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR2304SPBF IR2304STRPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,48 $0,39
Product Type Half-Bridge Gate Driver IC —
Configuration High and Low Side, Independent Channels High-side and low-side (half-bridge)
Anzahl der Ausgänge 2 2
Maximum Offset (Bootstrap) Voltage 600 V —
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Output Source/Sink Current 60 mA / 130 mA —
Propagation Delay (Typical) 220 ns —
Input Logic Compatibility 3.3 V, 5 V, 15 V 3.3 V CMOS / LSTTL
Undervoltage Lockout (UVLO) Both High-Side and Low-Side Channels —
Negative Transient Voltage Tolerance Yes (dV/dt immune) —
Logic Input Polarity Non-Inverting —
Gehäuse 8-Pin SOIC (SO-8 N) 8-SOIC (3.90 mm body width)
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -40 C to +125 C —
Technology HVIC + Latch-Immune CMOS, Monolithic —
RoHS-Status Compliant (Pb-free) PbF suffix indicates lead-free / RoHS compliant
Funktion — Half-bridge gate driver
Logic Input — Non-inverting, single input
Supply Voltage (VCC) — 10 V to 20 V
Offset Voltage (Voffset) — Up to 600 V
Output Source Current (typ.) — 0.29 A
Output Sink Current (typ.) — 0.6 A
Propagation Delay (typ.) — 220 ns (turn-on and turn-off, matched)
Rise / Fall Time — [DATA_NEEDED: rise/fall time]
Deadtime — Integrated (matched delay, prevents shoot-through)
dV/dt Immunity — Yes (high-side channel)
Negative VS Transient Tolerance — Yes
Betriebstemperatur — -40C to +125C
Packaging — Tape and Reel (TR)

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