IR25606STRPBF vs IRS2011STRPBF Vergleich

Detaillierter Direktvergleich von IR25606STRPBF von Infineon und IRS2011STRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IR25606STRPBF IRS2011STRPBF
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,05 $1,55
Funktion Half-Bridge Gate Driver Half-Bridge Gate Driver
Configuration Non-Inverting, High-Side and Low-Side High-Side and Low-Side, Independent Channels
Number of Drivers 2 —
Anzahl der Ausgänge 2 (High Side / Low Side) 2
Driven Configuration Half-Bridge —
High-Side Voltage (Offset) Up to 600 V —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Logic Input Voltage Compatible with 3.3 V and 5 V logic —
Source Current (typ.) 200 mA —
Sink Current (typ.) 350 mA —
Input Type Non-Inverting —
Rise Time (typ.) [DATA_NEEDED: rise time] —
Fall Time (typ.) [DATA_NEEDED: fall time] —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay] —
Under-Voltage Lockout (UVLO) Yes, on VCC and VB —
Shoot-Through Protection Integrated —
Betriebstemperatur -40 C to +125 C -40 C to +125 C
Gehäuse 8-SOIC (0.154", 3.90 mm width) 8-SOIC (DSO-8)
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL level] —
RoHS-Status Compliant (PBF suffix) Compliant (PBF suffix)
Lead-Free Yes (PBF suffix) —
Packaging Tape and Reel (TR suffix) —
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Logic Input Compatibility — 3.3 V CMOS / LSTTL
Bootstrap Supply — Integrated bootstrap diode, floating channel
Negative Transient Tolerance — Yes, dV/dt immune
Suitable Drivers — MOSFETs and IGBTs

Datenblätter & Ressourcen

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