IR25606STRPBF vs IRS2011STRPBF Comparação

Comparação detalhada lado a lado de IR25606STRPBF por Infineon e IRS2011STRPBF por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

Comparação de especificações

Parâmetro IR25606STRPBF IRS2011STRPBF
Marca Infineon Infineon
Categoria Power MOSFET Drivers Power MOSFET Drivers
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $1,05 $1,55
Função Half-Bridge Gate Driver Half-Bridge Gate Driver
Configuration Non-Inverting, High-Side and Low-Side High-Side and Low-Side, Independent Channels
Number of Drivers 2 —
Número de saídas 2 (High Side / Low Side) 2
Driven Configuration Half-Bridge —
High-Side Voltage (Offset) Up to 600 V —
Supply Voltage (VCC) 10 V to 20 V 10 V to 20 V
Logic Input Voltage Compatible with 3.3 V and 5 V logic —
Source Current (typ.) 200 mA —
Sink Current (typ.) 350 mA —
Input Type Non-Inverting —
Rise Time (typ.) [DATA_NEEDED: rise time] —
Fall Time (typ.) [DATA_NEEDED: fall time] —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay] —
Under-Voltage Lockout (UVLO) Yes, on VCC and VB —
Shoot-Through Protection Integrated —
Temperatura de operação -40 C to +125 C -40 C to +125 C
Encapsulamento 8-SOIC (0.154", 3.90 mm width) 8-SOIC (DSO-8)
Tipo de montagem Surface Mount Surface Mount
Nível MSL [DATA_NEEDED: MSL level] —
Status RoHS Compliant (PBF suffix) Compliant (PBF suffix)
Lead-Free Yes (PBF suffix) —
Packaging Tape and Reel (TR suffix) —
Maximum Offset Voltage (High-Side) — 200 V
Output Current (Source / Sink) — 1 A typical / 1 A typical
Propagation Delay (ton/toff) — 60 ns typical
Delay Matching — 20 ns maximum
Logic Input Compatibility — 3.3 V CMOS / LSTTL
Bootstrap Supply — Integrated bootstrap diode, floating channel
Negative Transient Tolerance — Yes, dV/dt immune
Suitable Drivers — MOSFETs and IGBTs

Fichas técnicas e recursos

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