IRF1310NSTRLPBF vs IRFB4110PBF Vergleich
Detaillierter Direktvergleich von IRF1310NSTRLPBF von Infineon und IRFB4110PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF1310NSTRLPBF | IRFB4110PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,84 | $1,55 |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | 4.5 mΩ |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | 73.3 nC | — |
| Power Dissipation (PD) at TC=25C | 160 W | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Betriebstemperaturbereich | -55C to +175C | — |
| Gehäuse | D2PAK (TO-263AB) | TO-220AB (through-hole) |
| Montageart | Surface Mount | Through Hole |
| Technology | IR MOSFET (HEXFET) | HEXFET (planar DMOS) |
| Built-in Diode | Yes (intrinsic body diode) | — |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Configuration | Single with built-in diode | — |
| Continuous Drain Current (ID) at TC=25°C | — | 120 A (bond-wire limited) |
| On-Resistance RDS(on) typ at VGS=10V | — | 3.7 mΩ |
| Power Dissipation (PD) at TC=25°C | — | 370 W |
| Betriebs-Sperrschichttemperatur | — | -55 °C to +175 °C |
| RoHS-Status | — | Compliant (Pb-free suffix) |
| Lead-Free | — | Yes (PBF suffix denotes Pb-free) |