IRF1405PBF vs IRLB3813PBF Vergleich
Detaillierter Direktvergleich von IRF1405PBF von Infineon und IRLB3813PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF1405PBF | IRLB3813PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,42 | $1,42 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number Suffix | PbF (lead-free, RoHS compliant) | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | HEXFET (Stripe Planar cell structure) | StrongIRFET (HEXFET) |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D, Tc=25C) | 169 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current rating] | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W | — |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V | — |
| Maximum Gate-Source Voltage (V_GS) | [DATA_NEEDED: maximum V_GS rating] | — |
| Operating Junction Temperature (T_J max) | 175 C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Gehäuse | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Montageart | Through Hole | Through Hole |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz | — |
| RoHS-Status | PbF suffix indicates lead-free / RoHS compliant | Compliant (Pb-free suffix PBF) |
| Single Pulse Avalanche Energy (E_AS) | [DATA_NEEDED: avalanche energy rating] | — |
| Thermal Resistance Junction-to-Case (R_theta_JC) | [DATA_NEEDED: thermal resistance R_theta_JC] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Tc=25C | — | 260 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | — | 1.95 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | 57 nC (typical, per Mouser snippet) |
| Power Dissipation (PD) at Tc=25C | — | 230 W |
| Betriebs-Sperrschichttemperatur | — | -55C to +175C (industry typical, [DATA_NEEDED for datasheet confirmation]) |
| Gate Drive Level | — | Logic-level (fully enhanced at 4.5 V VGS) |
| Avalanche Rated | — | Yes (per datasheet: fully characterised avalanche voltage and current) |
| Qualification Standard | — | JEDEC (industrial market) |
| Lead-Free | — | Yes |