IRF1405PBF vs IRLB3813PBF 比較
詳細な並列比較: IRF1405PBF メーカー: Infineon および IRLB3813PBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF1405PBF | IRLB3813PBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.42 | $1.42 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number Suffix | PbF (lead-free, RoHS compliant) | — |
| トランジスタタイプ | N-Channel MOSFET | — |
| Technology | HEXFET (Stripe Planar cell structure) | StrongIRFET (HEXFET) |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D, Tc=25C) | 169 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current rating] | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W | — |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V | — |
| Maximum Gate-Source Voltage (V_GS) | [DATA_NEEDED: maximum V_GS rating] | — |
| Operating Junction Temperature (T_J max) | 175 C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| パッケージ | TO-220AB (through-hole) | TO-220AB (through-hole) |
| 実装タイプ | Through Hole | Through Hole |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz | — |
| RoHS ステータス | PbF suffix indicates lead-free / RoHS compliant | Compliant (Pb-free suffix PBF) |
| Single Pulse Avalanche Energy (E_AS) | [DATA_NEEDED: avalanche energy rating] | — |
| Thermal Resistance Junction-to-Case (R_theta_JC) | [DATA_NEEDED: thermal resistance R_theta_JC] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Tc=25C | — | 260 A |
| Continuous Drain Current (ID) at Tc=100C | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | — | 1.95 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | — | 57 nC (typical, per Mouser snippet) |
| Power Dissipation (PD) at Tc=25C | — | 230 W |
| 動作接合温度 | — | -55C to +175C (industry typical, [DATA_NEEDED for datasheet confirmation]) |
| Gate Drive Level | — | Logic-level (fully enhanced at 4.5 V VGS) |
| Avalanche Rated | — | Yes (per datasheet: fully characterised avalanche voltage and current) |
| Qualification Standard | — | JEDEC (industrial market) |
| Lead-Free | — | Yes |