IRF1405PBF vs IRLB4132PBF Vergleich
Detaillierter Direktvergleich von IRF1405PBF von Infineon und IRLB4132PBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF1405PBF | IRLB4132PBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,42 | $0,62 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | PbF (lead-free, RoHS compliant) | — |
| Transistortyp | N-Channel MOSFET | N-Channel MOSFET (HEXFET) |
| Technology | HEXFET (Stripe Planar cell structure) | — |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D, Tc=25C) | 169 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current rating] | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W | — |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V | — |
| Maximum Gate-Source Voltage (V_GS) | [DATA_NEEDED: maximum V_GS rating] | — |
| Operating Junction Temperature (T_J max) | 175 C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Gehäuse | TO-220AB (through-hole) | — |
| Montageart | Through Hole | Through Hole |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz | — |
| RoHS-Status | PbF suffix indicates lead-free / RoHS compliant | — |
| Single Pulse Avalanche Energy (E_AS) | [DATA_NEEDED: avalanche energy rating] | — |
| Thermal Resistance Junction-to-Case (R_theta_JC) | [DATA_NEEDED: thermal resistance R_theta_JC] | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID, Tc=25C) | — | 78 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, Tc=25C) | — | 140 W |
| On-Resistance (RDS(on), VGS=10V) | — | 3.5 mOhm (typical) |
| On-Resistance (RDS(on), VGS=4.5V) | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th), typical) | — | 1.0 V to 2.5 V |
| Gate Charge (Qg, typical) | — | [DATA_NEEDED: total gate charge] |
| Maximum Junction Temperature | — | 175 C |
| Betriebstemperaturbereich | — | -55 C to +175 C |
| Gehäuse / Bauform | — | TO-220AB (through-hole, 3 leads) |
| Lead-Free / RoHS | — | Yes (Pb-free PBF suffix) |
| AEC-Q101 Automotive Qualification | — | Not qualified (industrial/commercial) |