IRF1405PBF vs IRLB4132PBF Сравнение
Подробное сравнение бок о бок IRF1405PBF от Infineon и IRLB4132PBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRF1405PBF | IRLB4132PBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,42 | $0,62 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number Suffix | PbF (lead-free, RoHS compliant) | — |
| Тип транзистора | N-Channel MOSFET | N-Channel MOSFET (HEXFET) |
| Technology | HEXFET (Stripe Planar cell structure) | — |
| Drain-Source Voltage (V_DS) | 55 V | — |
| Continuous Drain Current (I_D, Tc=25C) | 169 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current rating] | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 330 W | — |
| R_DS(on) Maximum | 5.3 mOhm @ V_GS = 10 V | — |
| Gate Threshold Voltage (V_GS(th)) | 2.0 V to 4.0 V | — |
| Maximum Gate-Source Voltage (V_GS) | [DATA_NEEDED: maximum V_GS rating] | — |
| Operating Junction Temperature (T_J max) | 175 C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range] | — |
| Корпус | TO-220AB (through-hole) | — |
| Тип монтажа | Through Hole | Through Hole |
| Qualification | JEDEC qualified, optimized for switching below 100 kHz | — |
| Статус RoHS | PbF suffix indicates lead-free / RoHS compliant | — |
| Single Pulse Avalanche Energy (E_AS) | [DATA_NEEDED: avalanche energy rating] | — |
| Thermal Resistance Junction-to-Case (R_theta_JC) | [DATA_NEEDED: thermal resistance R_theta_JC] | — |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID, Tc=25C) | — | 78 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, Tc=25C) | — | 140 W |
| On-Resistance (RDS(on), VGS=10V) | — | 3.5 mOhm (typical) |
| On-Resistance (RDS(on), VGS=4.5V) | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th), typical) | — | 1.0 V to 2.5 V |
| Gate Charge (Qg, typical) | — | [DATA_NEEDED: total gate charge] |
| Maximum Junction Temperature | — | 175 C |
| Диапазон рабочих температур | — | -55 C to +175 C |
| Корпус / Типоразмер | — | TO-220AB (through-hole, 3 leads) |
| Lead-Free / RoHS | — | Yes (Pb-free PBF suffix) |
| AEC-Q101 Automotive Qualification | — | Not qualified (industrial/commercial) |