IRF3205STRLPBF vs IPP120N04S4-02 Vergleich

Detaillierter Direktvergleich von IRF3205STRLPBF von Infineon und IPP120N04S4-02 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF3205STRLPBF IPP120N04S4-02
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $1,02 $1,72
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) @ Tc=25°C 110 A —
Pulsed Drain Current (Idm) 390 A —
Static Drain-Source On-Resistance (Rds(on)) 8 mΩ max @ Vgs=10V —
Gate-Source Threshold Voltage (Vgs(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 97.3 nC typical —
Power Dissipation (Pd) @ Tc=25°C 200 W —
Betriebstemperaturbereich -55 °C to +175 °C (Tj) —
Gehäuse TO-263-3 (D2PAK) —
Montageart Surface Mount —
Lead-Free / RoHS Status Lead-Free / RoHS Compliant (PBF suffix) —
Technology HEXFET (advanced process) —
Packaging Tape & Reel (STRL) —
Manufacturer — Infineon Technologies
Part Family — OptiMOS-T2
FET Type — N-Channel MOSFET, Enhancement Mode
Drain-to-Source Voltage (V<sub>DSS</sub>) — 40 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 degC) — 120 A
Pulsed Drain Current (I<sub>DM</sub>) — 480 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V — 1.9 mOhm (DigiKey listing); 1.8 mOhm (Infineon product page)
Gate Threshold Voltage (V<sub>GS(th)</sub>) — [DATA_NEEDED: typical V_GS(th) and V_GS range]
Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 degC) — 158 W
Betriebs-Sperrschichttemperatur — -55 degC to +175 degC
Package / Mounting Type — PG-TO220-3-1 (TO-220-3, through-hole)
AEC Qualification — AEC qualified (automotive)
MSL (Moisture Sensitivity Level) — MSL1, 260 degC peak reflow
Avalanche Rating — 100% avalanche tested
RoHS / Lead-Free — RoHS compliant (Green Product), lead-free
Pin-Anzahl — 3 (Gate, Drain, Source)
Single Pulse Avalanche Energy (E<sub>AS</sub>) — [DATA_NEEDED: E_AS]
Thermal Resistance Junction-to-Case (R<sub>thJC</sub>) — [DATA_NEEDED: R_thJC degC/W]

Datenblätter & Ressourcen

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