IRF3205STRLPBF vs IPP120N04S4-02 比較
詳細な並列比較: IRF3205STRLPBF メーカー: Infineon および IPP120N04S4-02 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IRF3205STRLPBF | IPP120N04S4-02 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.02 | $1.72 |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 110 A | — |
| Pulsed Drain Current (Idm) | 390 A | — |
| Static Drain-Source On-Resistance (Rds(on)) | 8 mΩ max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 97.3 nC typical | — |
| Power Dissipation (Pd) @ Tc=25°C | 200 W | — |
| 動作温度範囲 | -55 °C to +175 °C (Tj) | — |
| パッケージ | TO-263-3 (D2PAK) | — |
| 実装タイプ | Surface Mount | — |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant (PBF suffix) | — |
| Technology | HEXFET (advanced process) | — |
| Packaging | Tape & Reel (STRL) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS-T2 |
| FET Type | — | N-Channel MOSFET, Enhancement Mode |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 degC) | — | 120 A |
| Pulsed Drain Current (I<sub>DM</sub>) | — | 480 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 1.9 mOhm (DigiKey listing); 1.8 mOhm (Infineon product page) |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: typical V_GS(th) and V_GS range] |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 degC) | — | 158 W |
| 動作接合温度 | — | -55 degC to +175 degC |
| Package / Mounting Type | — | PG-TO220-3-1 (TO-220-3, through-hole) |
| AEC Qualification | — | AEC qualified (automotive) |
| MSL (Moisture Sensitivity Level) | — | MSL1, 260 degC peak reflow |
| Avalanche Rating | — | 100% avalanche tested |
| RoHS / Lead-Free | — | RoHS compliant (Green Product), lead-free |
| ピン数 | — | 3 (Gate, Drain, Source) |
| Single Pulse Avalanche Energy (E<sub>AS</sub>) | — | [DATA_NEEDED: E_AS] |
| Thermal Resistance Junction-to-Case (R<sub>thJC</sub>) | — | [DATA_NEEDED: R_thJC degC/W] |