IRF540NSTRLPBF vs IRF530NSTRLPBF Vergleich
Detaillierter Direktvergleich von IRF540NSTRLPBF von Infineon und IRF530NSTRLPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | IRF540NSTRLPBF | IRF530NSTRLPBF |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,74 | $0,89 |
| Transistortyp | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | HEXFET (Planar Stripe Cell) |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 33 A | — |
| Pulsed Drain Current (Idm) | 110 A (per datasheet pulse curve) | — |
| On-Resistance Rds(on) max at Vgs=10V | 44 mOhm | — |
| Gate Threshold Voltage Vgs(th) | 2.0 V to 4.0 V | — |
| Total Gate Charge Qg | 47.3 nC (typical) | — |
| Power Dissipation (Pd) at Tc=25C | 130 W | 70 W |
| Betriebstemperaturbereich | -55 C to +175 C | -55C to +175C |
| Gehäuse | D2PAK (TO-263), surface mount | — |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (13-inch reel) | — |
| RoHS-Status | Compliant (Pb-free) | — |
| Avalanche Energy Rated | Yes (HEXFET ruggedized) | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25C | — | 17 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 90 mOhm |
| Total Gate Charge (Qg) | — | 24.7 nC |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Package Type | — | D2PAK (TO-263), 3-pin (2 + tab) |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant |
| Qualification Market | — | Industrial |