IRF540NSTRLPBF vs IRF530NSTRLPBF Comparison
Detailed side-by-side comparison of IRF540NSTRLPBF by Infineon and IRF530NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF540NSTRLPBF | IRF530NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Transistor Type | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | HEXFET (Planar Stripe Cell) |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 33 A | — |
| Pulsed Drain Current (Idm) | 110 A (per datasheet pulse curve) | — |
| On-Resistance Rds(on) max at Vgs=10V | 44 mOhm | — |
| Gate Threshold Voltage Vgs(th) | 2.0 V to 4.0 V | — |
| Total Gate Charge Qg | 47.3 nC (typical) | — |
| Power Dissipation (Pd) at Tc=25C | 130 W | 70 W |
| Operating Temperature Range | -55 C to +175 C | -55C to +175C |
| Package | D2PAK (TO-263), surface mount | — |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (13-inch reel) | — |
| RoHS Status | Compliant (Pb-free) | — |
| Avalanche Energy Rated | Yes (HEXFET ruggedized) | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25C | — | 17 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 90 mOhm |
| Total Gate Charge (Qg) | — | 24.7 nC |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Package Type | — | D2PAK (TO-263), 3-pin (2 + tab) |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant |
| Qualification Market | — | Industrial |