IRF7105TRPBF vs IRF7341GTRPBF Vergleich

Detaillierter Direktvergleich von IRF7105TRPBF von Infineon und IRF7341GTRPBF von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IRF7105TRPBF IRF7341GTRPBF
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,30 $0,76
Manufacturer Infineon Technologies —
Part Series IRF7105 (HEXFET Fifth Generation) —
Polarity / Configuration N-Channel + P-Channel, dual MOSFET in one package —
Drain-to-Source Voltage (Vds) 25 V —
Continuous Drain Current - N-channel (Id, N-ch) 3.5 A —
Continuous Drain Current - P-channel (Id, P-ch) 2.3 A —
Rds(on) Maximum 100 mOhm —
Technology HEXFET (IR MOSFET, fifth generation) IR HEXFET Planar MOSFET
Gehäuse 8-SO (SOIC-8) 8-SO (SOIC-8)
Total Package Power Dissipation (Pd) 2 W —
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich [DATA_NEEDED: junction temperature range] -55 C to +175 C
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Packaging Form Tape & Reel (TR) —
Lead-Free / RoHS Status Pb-free (PBF suffix), RoHS compliant —
Pin-Anzahl 8 —
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) — 5.1 A
On-Resistance (RDS(on)) max — 50 mOhm at VGS=10V
Power Dissipation (PD) — 2.4 W
Maximum Junction Temperature — 175 C
Configuration — Dual N-Channel
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss typical]
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
RoHS-Status — Compliant
Lead-Free — Yes (PBF suffix)

Datenblätter & Ressourcen

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